LNA GaAs DEVICE
Gallium Arsenide HEMT devices are used in receivers to amplify weak signals without generating noise.
It is possible to achieve noise figures as low as 0.35-0.5dB at 12GHz with typically 13dB in gain.
The low-noise GaAs HEMT devices are probably the most suitable semiconductor for high-frequency communication receivers.
Low-noise solutions for satcom application can be found from the S-band to Ka- band.